DMTH8008SFGQ-13

$0.43

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:758f364c8fd5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI33
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：17A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：31.7 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1945 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta), 50W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMTH8008SFGQ-13

Overview

The DMTH8008SFGQ-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications. It features a drain-source voltage of 80V and operates up to +175°C. The device offers low on-resistance of 7mΩ at VGS=10V and 10.5mΩ at VGS=6V. Continuous drain current reaches 68A at TC=+25°C. Packaged in PowerDI3333-8, it supports high-density designs with excellent thermal efficiency.

Feature Summary

Rated for operation up to +175°C, suitable for high ambient temperature environments
Low RDS(ON) minimizes on-state power losses
Small form factor package occupies only 33% of the board area compared to SO-8
100% unclamped inductive switching (UIS) tested in production

Applications

Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify AEC-Q101 qualification and PPAP capability requirements against specific automotive project standards. Confirm IATF 16949 manufacturing facility compliance if required by your supply chain quality agreements. Ensure RoHS 3 and halogen-free specifications meet environmental regulations for your target market.

Selection Notes

Select this component when high thermal stability and low conduction losses are critical. The PowerDI3333-8 package provides superior thermal dissipation compared to standard plastic packages. Consider the gate threshold voltage range and total gate charge for driver compatibility in high-frequency switching applications.

Part Context

This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It utilizes advanced silicon technology optimized for DC-DC converter efficiency. The PowerDI series focuses on reducing footprint while maintaining robust electrical performance under demanding thermal conditions typical in modern electronic systems.