DMTH8008SPS-13

$0.32

Description：MOSFET N-CH 80V 92A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:d0ae7d918c85 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 92A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：92A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：7.8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1950 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta), 100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

Download product information

DMTH8008SPS-13

Overview

The DMTH8008SPS-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features an 80V drain-source voltage rating and a maximum continuous drain current of 92A at TC = +25°C. The device exhibits a low on-resistance of 7.8mΩ at VGS = 10V and 14A. It supports operation up to +175°C junction temperature and includes 100% unclamped inductive switching (UIS) testing for reliability.

Feature Summary

Rated for high ambient temperature environments with operation up to +175°C
Features 100% unclamped inductive switching (UIS) testing in production
Designed to minimize on-state losses through low RDS(ON)
RoHS compliant and halogen/antimony free

Applications

DC-DC converters
Load switches
Power management circuits

Procurement Notes

Verify the specific datasheet revision and ordering suffix against official Diodes Incorporated documentation before procurement. Confirm that the PowerDI5060-8/SWP variant matches the required footprint. Ensure compliance with RoHS and REACH directives as specified in the manufacturer's quality definitions. Validate thermal resistance parameters based on the intended PCB copper layout and mounting conditions.

Selection Notes

Select this component when an 80V N-channel MOSFET with high current handling capability is required. The PowerDI5060-8 package provides efficient thermal dissipation suitable for compact designs. Consider the +175°C operating range for applications exposed to elevated temperatures. Verify gate threshold voltage requirements align with the control logic driving the load switch or converter.

Part Context

This part belongs to the DMTH series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. These devices utilize silicon technology optimized for minimizing on-resistance while maintaining superior switching performance. The series is designed for power management applications requiring robust reliability and high conversion efficiency.

Replacement Considerations

An automotive-compliant version is available under the separate datasheet DMTH8008SPSQ. Verify pinout compatibility and thermal characteristics when substituting with other 80V N-channel MOSFETs in the PowerDI5060-8 package.