DMTH8012LK3-13

$1.17

Description：MOSFET N-CH 80V 50A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0b5ea76b937e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 50A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1949 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMTH8012LK3-13

Overview

The DMTH8012LK3-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a TO252 (DPAK) package. It features a drain-source voltage rating of 80V and a maximum continuous drain current of 50A at +25°C case temperature. The device offers a low on-state resistance of 16mΩ at VGS=10V and 21mΩ at VGS=4.5V. It supports junction temperatures up to +175°C and includes a built-in body diode with a forward current rating of 3A.

Feature Summary

Designed for high-efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
Rated for operation in high ambient temperature environments with a maximum junction temperature of +175°C.
Features fast switching speed and low input capacitance to ensure high conversion efficiency.

Applications

Synchronous rectifiers
Backlighting circuits
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as documented in the official datasheet. Confirm that the component meets RoHS compliance standards and is halogen and antimony free. Ensure the selected variant aligns with the required thermal and electrical specifications for the intended application environment.

Selection Notes

Select this component when an 80V N-channel MOSFET with a TO252 package is required for high-temperature environments. Consider the 16mΩ on-resistance at 10V gate drive for optimal conduction losses. Evaluate the thermal resistance characteristics against the system's heat dissipation capabilities to ensure reliable operation within the specified temperature range.

Part Context

This part belongs to the DMTH series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is characterized by its ability to operate at elevated temperatures up to +175°C. The DMTH8012LK3-13 specifically utilizes the TO252 (DPAK) surface-mount package, designed for efficient thermal transfer and compact board space utilization in power electronics designs.

Replacement Considerations

An automotive-compliant version of this component is available under the separate part number DMTH8012LK3Q. Verify if the specific automotive qualification requirements of the target application necessitate the use of the Q-suffix variant instead of the standard commercial grade part.