DMTH8012LK3Q-13

$0.55

Description：MOSFET N-CH 80V 50A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:699ee0eb5bce Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 50A TO252
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：16mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：46.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2051 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252-3
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMTH8012LK3Q-13

Overview

The DMTH8012LK3Q-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a TO252 (DPAK) package. It features a drain-source voltage of 80V and a maximum continuous drain current of 50A at 25°C case temperature. The device exhibits a low on-resistance of 16mΩ at VGS=10V and 21mΩ at VGS=4.5V. It supports junction temperatures up to +175°C and includes an integrated body diode with a forward voltage of 1.2V maximum.

Feature Summary

Qualified for automotive applications under AEC-Q101 standards and PPAP capable.
Designed for high ambient temperature environments with a +175°C rating.
Optimized for high conversion efficiency through minimized on-state losses.
Features fast switching speeds and low input capacitance.

Applications

Engine management units
Motor control systems
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2500 units per reel. Confirm that the component meets RoHS directives and is halogen and antimony free as defined by the manufacturer's green product standards. Ensure the application environment aligns with the specified thermal resistance and power dissipation limits provided in the datasheet.

Selection Notes

Select this component when designing circuits requiring robust performance in high-temperature automotive or industrial settings. The TO252 package provides effective thermal management for power dissipation needs. Consider the gate threshold voltage range and total gate charge characteristics to ensure compatibility with the intended driver circuitry and switching frequency requirements.

Part Context

This part belongs to the DMTH series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is engineered to meet stringent automotive reliability standards. The specific model utilizes silicon technology within a molded plastic DPAK package, designed for surface mount applications requiring high current handling capabilities.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified equivalent parts. Cross-referencing should strictly match voltage ratings, current capabilities, and package dimensions to ensure functional interchangeability without compromising system safety or performance.