DMTH8012LPS-13

$0.26

Description：MOSFET N-CH 80V 10A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:2195335c47df Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 10A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：10A (Ta), 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：17mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1949 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：2.6W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMTH8012LPS-13

Overview

The DMTH8012LPS-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 80V and operates up to a junction temperature of +175°C. The device provides a continuous drain current (ID) of 50A at TC = +25°C, with a maximum static drain-source on-resistance (RDS(ON)) of 17mΩ at VGS = 10V and 21mΩ at VGS = 4.5V. Packaged in a PowerDI5060-8 surface-mount format, it includes a total gate charge (Qg) of 34nC at VGS = 10V.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Designed to minimize on-state resistance while maintaining superior switching performance
Qualified to JEDEC standards for high reliability applications

Applications

Synchronous rectifiers
Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance requirements and is halogen-free if environmental specifications are required for the assembly process.

Selection Notes

Select this component when an 80V rating is sufficient and low RDS(ON) is critical for efficiency. Ensure the thermal design accommodates the specified power dissipation limits. Verify that the gate drive voltage supports the desired conduction characteristics, noting the higher resistance at lower VGS levels.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI5060-8 package, which is designed for efficient thermal transfer through the exposed drain pad. The product line targets high-efficiency power management solutions requiring robust performance in compact form factors.