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Product Detailed Parameters
- Description：MOSFET N-CH 80V 53.7A PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：53.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：17mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1949 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type Q)
- Package / Case：8-PowerTDFN
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Overview
The DMTH8012LPSW-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features an 80V drain-source voltage rating and operates up to +175°C junction temperature. At VGS=10V, the on-resistance is 17mΩ with a continuous drain current of 53.7A at TC=+25°C. The device offers fast switching speeds, low input capacitance, and 100% unclamped inductive switching capability.
Feature Summary
- Rated for high ambient temperatures up to +175°C
- Ensures robust end applications through 100% unclamped inductive switching testing
- Minimizes on-state losses via low RDS(ON) while maintaining superior switching performance
- Includes additional tin-plated sidewall pads to facilitate optical solder inspection
Applications
- Synchronous rectifiers
- Backlighting circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific package variant (Type Q or Type UX) required for your design, as both are available under the same part number suffix. Confirm compliance with RoHS, REACH, and halogen-free standards during procurement. Ensure the ordering quantity matches the standard tape and reel packaging specifications provided by the manufacturer.
Selection Notes
Select this component for designs requiring high efficiency and thermal resilience in compact footprints. Evaluate the gate threshold voltage and total gate charge against your driver capabilities to optimize switching transitions. Consider the exposed drain pad thermal characteristics for effective heat dissipation in power management architectures.
Part Context
This MOSFET belongs to Diodes Incorporated's PowerDI family, designed for surface-mount applications. It utilizes silicon technology within a molded plastic 'Green' compound casing. The component is qualified to JEDEC standards for high reliability and is suitable for environments demanding strict size constraints and efficient thermal management.
Replacement Considerations
For automotive applications requiring AEC-Q qualification, PPAP capability, and IATF 16949 manufacturing, consult the related automotive grade parts with the Q-suffix. Verify pinout compatibility and thermal resistance values when substituting similar MOSFETs in existing synchronous rectifier or DC-DC converter layouts.
