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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI33
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：631 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMTH8028LFVW-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8/SWP package. It features a drain-source voltage (BVDSS) of 80V and a maximum on-state resistance (RDS(ON)) of 25mΩ at VGS=10V and 41mΩ at VGS=4.5V. The device supports a continuous drain current (ID) of 27A at TC=+25°C and operates within a temperature range of -55°C to +175°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Features wettable flanks to facilitate improved optical inspection during manufacturing.
- Compliant with totally lead-free and fully RoHS standards, ensuring halogen and antimony-free composition.
Applications
- Backlighting systems
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel carrier configuration as defined in the manufacturer's documentation. Confirm that the component meets all applicable environmental directives, including RoHS 2 and RoHS 3 compliance requirements, prior to final procurement authorization.
Selection Notes
Select this component when an 80V rating and low RDS(ON) are required in a compact PowerDI3333-8 form factor. Ensure thermal design accounts for the specified junction-to-ambient resistance values under intended operating conditions. Verify gate drive voltage compatibility with the threshold characteristics provided in the electrical specifications.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is packaged in the PowerDI3333-8/SWP surface-mount format. The product line emphasizes thermally efficient designs suitable for dense electronic assemblies requiring robust switching capabilities.
Replacement Considerations
An automotive-compliant variant is available under the separate datasheet designation DMTH8028LFVWQ. Verify functional equivalence and package compatibility before substituting other 80V N-channel MOSFETs from different manufacturers.
