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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI33
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：631 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMTH8028LFVWQ-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features an 80V drain-source voltage rating and a maximum continuous drain current of 27A at 25°C case temperature. The device exhibits a low on-resistance of 25mΩ at VGS=10V and 41mΩ at VGS=4.5V. Operating temperatures range from -55°C to +175°C. It is AEC-Q101 qualified with PPAP capability for automotive use.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP support for automotive applications
- 100% Unclamped Inductive Switching (UIS) tested in production for robustness
- PowerDI3333-8 package with wettable flanks for improved optical inspection
Applications
- Backlighting systems
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel carrier configuration as defined in the manufacturer's documentation. Confirm that the component meets all required automotive quality standards, including IATF 16949 manufacturing facility certification and full RoHS compliance, prior to final procurement authorization.
Selection Notes
Select this component when designing circuits requiring high-density layouts due to its compact PowerDI3333-8 form factor. Ensure the application operates within the specified thermal limits, utilizing the exposed drain pad for optimal heat dissipation. Verify gate drive voltages align with the threshold characteristics to maintain the desired on-resistance performance levels.
Part Context
This part belongs to the DMTH series of automotive-grade MOSFETs designed by Diodes Incorporated. These devices are engineered specifically for demanding environments, offering enhanced reliability through rigorous UIS testing. The series supports various voltage and current combinations within small surface-mount packages suitable for modern electronic assemblies.
Replacement Considerations
Consult official Diodes Incorporated substitution guides for verified alternatives. Cross-referencing requires matching critical parameters such as BVDSS, RDS(ON), package type, and AEC-Q101 qualification status to ensure functional compatibility.
