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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI33
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：631 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMTH8028LFVWQ-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive applications. It features a drain-source voltage (BVDSS) of 80V and operates within a temperature range of -55°C to +175°C. The device offers a maximum on-resistance (RDS(ON)) of 25mΩ at VGS=10V with a continuous drain current (ID) of 27A at TC=+25°C. It is housed in a PowerDI3333-8/SWP package.
Feature Summary
- Qualified to AEC-Q101 standards and supported by PPAP for automotive use
- Manufactured in IATF 16949 certified facilities
- Features wettable flanks for improved optical inspection
- Totally lead-free and fully RoHS compliant
Applications
- Backlighting
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 2,000-unit tape and reel packing configuration as defined in the official datasheet. Confirm that the component meets all required automotive qualification standards, including AEC-Q101 compliance and PPAP support, before finalizing procurement specifications.
Selection Notes
Select this component when an 80V N-channel MOSFET is required for high-density automotive designs. Ensure the application can accommodate the PowerDI3333-8/SWP package dimensions and thermal characteristics. Verify that the gate drive voltage aligns with the specified RDS(ON) performance thresholds for optimal efficiency.
Part Context
This part belongs to the DMTH series of MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8/SWP surface-mount package technology. The product line is specifically engineered to meet stringent automotive reliability requirements while maintaining a compact form factor suitable for modern electronic systems.
Replacement Considerations
Consult the manufacturer's official documentation for verified equivalent parts or direct replacements. Cross-referencing should be performed based on matching electrical parameters, package dimensions, and automotive qualification status.
