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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：41.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：641 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.9W (Ta), 65W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH8028LPSW-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features an 80V drain-source voltage rating and a maximum junction temperature of 175°C. The device offers a typical on-resistance of 25mΩ at VGS=10V and 41mΩ at VGS=4.5V. Continuous drain current reaches 41.7A at TC=25°C. Key electrical parameters include a gate threshold voltage of 1.3V to 2.5V, total gate charge of 10.4nC at VGS=10V, and input capacitance of 641pF.
Feature Summary
- 100% Unclamped Inductive Switching (UIS) tested in production for enhanced reliability
- Wettable flank design facilitates improved optical inspection during assembly
- Optimized for high conversion efficiency with low input capacitance and fast switching speed
- Lead-free finish compliant with RoHS directives and free of halogen and antimony
Applications
- Synchronous rectifier circuits
- Backlighting power supplies
- DC-DC converters
- General power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets the required automotive quality standards if applicable, as standard versions may differ from AEC-Q100/101 qualified parts. Ensure the PowerDI5060-8 (SWP) case style matches the PCB footprint requirements. Cross-reference the datasheet revision DS42851 Rev. 2 - 2 for accurate thermal and electrical specifications before finalizing procurement.
Selection Notes
Select this component for applications requiring robust switching performance and low conduction losses within an 80V system. The 175°C operating range supports high-temperature environments. Evaluate the thermal resistance values against the expected heat dissipation requirements. Consider the gate charge characteristics for driving circuit compatibility. Verify that the continuous and pulsed drain currents align with the peak load demands of the target application.
Part Context
This part belongs to the DMTH series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package, which provides a compact form factor suitable for space-constrained designs. The series is engineered to balance low on-state resistance with superior switching capabilities, targeting efficient power management solutions in modern electronic systems.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Generic replacements must match the 80V rating, PowerDI5060-8 package, and comparable RDS(ON) and Qg specifications. Verify pinout compatibility and thermal characteristics before implementation.
