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Product Detailed Parameters
- Description：MOSFET BVDSS: 61V~100V POWERDI50
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：41.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：641 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.9W (Ta), 65W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMTH8028LPSWQ-13 is an N-channel enhancement mode MOSFET designed for automotive applications. It features a drain-source voltage of 80V and a continuous drain current of 41.7A at 25°C case temperature. The device offers a maximum on-resistance of 25mΩ at VGS=10V and 41mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI5060-8 package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Features wettable flanks to improve optical inspection reliability
- Includes 100% unclamped inductive switching (UIS) testing in production
- Constructed with lead-free, halogen-free, and antimony-free materials
Applications
- Synchronous Rectifiers
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm compliance with RoHS directives and ensure suitability for intended operating temperatures. Validate that the specific ordering suffix matches required packaging configurations before finalizing procurement decisions.
Selection Notes
Select this component when designing circuits requiring high conversion efficiency and fast switching speeds. Consider its low input capacitance and robust thermal characteristics for power management applications. Ensure gate drive voltages align with specified thresholds for optimal performance and reliability in automotive environments.
Part Context
This part belongs to Diodes Incorporated's automotive-grade MOSFET portfolio. It is manufactured in IATF 16949 certified facilities to meet stringent quality requirements. The device integrates advanced silicon technology into a compact surface-mount package suitable for automated assembly processes.
Replacement Considerations
Consult official substitution lists or contact the manufacturer directly for verified alternative part numbers. Do not assume cross-compatibility based solely on similar electrical ratings without verifying pinout and package dimensions.
