DMTH8030LFDFW-13

$0.14

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:5d33ba2954b9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：641 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：U-DFN2020-6 (SWP) (Type UXG)
Package / Case：6-UDFN Exposed Pad

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DMTH8030LFDFW-13

Overview

The DMTH8030LFDFW-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 package. It features a drain-source voltage (BVDSS) of 80V and a maximum continuous drain current of 6.5A at 25°C. The device offers a low on-resistance (RDS(ON)) of 25mΩ at VGS=10V and 38mΩ at VGS=4.5V. It supports a junction temperature range of -55°C to +175°C and includes 100% UIS testing for reliability.

Feature Summary

Rated for operation up to +175°C junction temperature
Features a 0.6mm profile suitable for low-profile applications
Includes 100% unclamped inductive switching (UIS) testing

Applications

Power-management functions
Battery operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel packing configuration as defined in the manufacturer's documentation. Confirm that the U-DFN2020-6/SWP package type matches your PCB footprint requirements. Ensure compliance with RoHS 3 and halogen-free specifications if required by your design standards.

Selection Notes

Select this component when an 80V rating and low RDS(ON) are required for high-efficiency power management. Consider the U-DFN2020-6 package dimensions for space-constrained designs. Evaluate thermal performance based on the specified junction-to-ambient resistance values under different mounting conditions.

Part Context

This part belongs to Diodes Incorporated's new generation MOSFET lineup designed to minimize on-state resistance while maintaining superior switching performance. It utilizes silicon technology and is manufactured in lead-free, green-compliant facilities.