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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：25mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：641 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.5W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：U-DFN2020-6 (SWP) (Type UXG)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMTH8030LFDFW-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6/SWP package. It features a drain-source voltage (BVDSS) of 80V and a maximum continuous drain current (ID) of 6.5A at +25°C. The device offers a low on-state resistance (RDS(ON)) of 25mΩ max at VGS=10V and 38mΩ max at VGS=4.5V. It supports a junction temperature range of -55°C to +175°C and includes 100% UIS testing for reliability.
Feature Summary
- Rated for operation up to +175°C junction temperature
- Features a 0.6mm profile suitable for low-profile applications
- Includes 100% unclamped inductive switching (UIS) test verification
Applications
- Power-management functions
- Battery operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets RoHS, REACH, and halogen-free requirements if environmental compliance is mandatory for the target assembly process. Ensure the U-DFN2020-6 footprint matches the PCB layout design rules provided by Diodes Incorporated.
Selection Notes
Select this component when an 80V rating and low RDS(ON) are required within a compact U-DFN2020-6 form factor. Consider the thermal characteristics and power dissipation limits relative to the intended PCB copper area. Evaluate gate threshold voltage requirements against the driving circuit capabilities to ensure reliable switching performance under varying load conditions.
Part Context
This part belongs to Diodes Incorporated's generation of MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. The U-DFN2020-6 package provides a small PCB footprint of 4mm² with a 0.6mm height, targeting space-constrained high-efficiency power management designs.
Replacement Considerations
Consult official Diodes Incorporated substitution guides or contact technical support for verified equivalent parts. Do not assume cross-compatibility based solely on voltage and current ratings without verifying pinout, thermal resistance, and dynamic electrical characteristics.
