DMTH8030LFDFWQ-13

Overview

The DMTH8030LFDFWQ-13 is an N-channel enhancement mode MOSFET rated for a drain-source voltage of 80V and a junction temperature up to +175°C. It features a maximum on-resistance of 25mΩ at VGS=10V and 38mΩ at VGS=4.5V, with continuous drain currents of 6.5A at TA=+25°C (VGS=10V) and 5.5A at TA=+25°C (VGS=4.5V). The device utilizes a U-DFN2020-6/SWP package with a 0.6mm profile.

Feature Summary

• Rated for high ambient temperature environments with operation up to +175°C
• Suitable for automotive applications requiring specific change control; AEC-Q101 qualified and PPAP capable
• Features a low-profile 0.6mm design with a compact PCB footprint of 4mm²

Applications

• Power-management functions
• Battery operated systems and solid-state relays
• Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Procurement Notes

Verify the complete part number including the suffix to confirm packaging quantity and reel specifications. Confirm that the intended application meets the requirements for AEC-Q101 qualification and PPAP capability if used in automotive contexts. Ensure thermal management aligns with the specified power dissipation limits under the chosen mounting conditions.

Selection Notes

Select this component when designing circuits requiring robust switching performance combined with low on-state resistance in space-constrained layouts. The +175°C rating makes it suitable for high-temperature environments. Verify gate drive voltages against the specified thresholds for optimal RDS(ON) performance.

Part Context

This MOSFET belongs to Diodes Incorporated's PowerDI family, designed to minimize on-state resistance while maintaining superior switching characteristics. It is manufactured in IATF 16949 certified facilities and is totally lead-free, fully RoHS compliant, and halogen and antimony free.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.