DMTH82M6SPSW-13

$0.82

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e7b362322ef8 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：174A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：2.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：87 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5466 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：4.1W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH82M6SPSW-13

Overview

The DMTH82M6SPSW-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of 80V and a maximum on-resistance (RDS(ON)) of 2.6mΩ at VGS=10V with a continuous drain current (ID) of 174A. At VGS=6V, RDS(ON) is 5.3mΩ with ID of 133A. The device supports junction temperatures up to +175°C, has a gate-source voltage rating of ±20V, and includes 100% UIS testing for reliability.

Feature Summary

Engineered to minimize on-state losses while maintaining superior switching performance through low input capacitance and fast switching speeds.
Manufactured with lead-free finish and complies with RoHS directives; halogen and antimony free.
Qualified to JEDEC standards for high reliability and tested for 100% unclamped inductive switching (UIS).

Applications

Engine-management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the standard commercial version matches your design requirements, noting that an automotive-compliant variant exists under a separate datasheet designation. Ensure compatibility with the specified PowerDI5060-8/SWP footprint during procurement planning.

Selection Notes

Select this component for applications requiring high current handling up to 174A and operation at elevated temperatures up to 175°C. The low RDS(ON) characteristics make it suitable for power management circuits where efficiency is critical. Verify that the 80V breakdown voltage aligns with system voltage levels and consider the thermal resistance values for adequate heat dissipation design.

Part Context

This part belongs to Diodes Incorporated's generation of N-channel MOSFETs designed for automotive and industrial power management. It utilizes the PowerDI5060-8 surface-mount package to provide robust performance in compact designs. The device is distinct from its automotive-qualified counterpart, which carries a different suffix and datasheet reference.

Replacement Considerations

An automotive-compliant substitute is available as DMTH82M6SPSWQ. Verify if the application requires AEC-Q qualification before selecting the Q-suffix variant over the standard commercial DMTH82M6SPSW-13.

FAQ

Is the DMTH82M6SPSW-13 qualified for automotive applications?

No, the standard DMTH82M6SPSW-13 is not automotive-qualified. An automotive-compliant version, DMTH82M6SPSWQ, is available under a separate datasheet.