DMTH83M2SPSWQ-13

$0.96

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ac5f07bc81db Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 61V~100V POWERDI50
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：165A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：2.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：87 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5466 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：4.1W (Ta), 150W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMTH83M2SPSWQ-13

Overview

The DMTH83M2SPSWQ is an N-channel enhancement mode MOSFET designed for automotive applications, qualified to AEC-Q101. It features a maximum drain-source voltage (BVDSS) of 80V and a gate-source voltage (VGSS) rating of ±20V. The device offers a low on-resistance (RDS(ON)) of 2.9mΩ at VGS=10V and 5.3mΩ at VGS=6V. Continuous drain current (ID) reaches 165A at TC=+25°C with VGS=10V. It operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Qualified to AEC-Q101 standards with PPAP capability for automotive use
100% Unclamped Inductive Switching (UIS) tested in production
Low RDS(ON) minimizes on-state power losses
Fast switching speed supported by low input capacitance

Applications

Engine management systems
Body control electronics
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per carrier. Confirm that the component meets RoHS 3 and Halogen/Antimony-free requirements as defined by Diodes Incorporated. Ensure the design accounts for the PowerDI5060-8/SWP package dimensions and thermal resistance characteristics during integration.

Selection Notes

Select this component for high-current automotive circuits requiring robust UIS performance and low conduction losses. Evaluate the thermal resistance from junction to case (1°C/W) against the application's heat dissipation needs. Consider the 80V breakdown voltage and 165A continuous current ratings to ensure adequate headroom for system transients and steady-state operation.

Part Context

This part belongs to the DMTH series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8/SWP surface-mount package, which provides a compact footprint with enhanced thermal performance compared to traditional packages. The series is specifically engineered to meet the stringent reliability and quality standards required by the automotive industry.