DMTH84M1SPSW-13

$0.66

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:c98a16870034 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4209 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta), 136W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

Download product information

DMTH84M1SPSW-13

Overview

The DMTH84M1SPSW-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 80V and a maximum continuous drain current (ID) of 100A at TC = +25°C. The device achieves a low static drain-source on-resistance (RDS(ON)) of 4mΩ at VGS = 10V and ID = 20A, or 5.7mΩ at VGS = 6V and ID = 20A. It operates within a junction temperature range of -55°C to +175°C and utilizes the PowerDI5060-8/SWP package.

Feature Summary

Rated for operation in high ambient temperature environments up to +175°C
Manufactured with lead-free finish and complies with RoHS directives
Halogen and antimony free "Green" device construction
Undergoes 100% unclamped inductive switching (UIS) testing in production

Applications

DC-DC converters
Load switches
Power management circuits

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity and carrier type. Confirm that the component meets all applicable environmental compliance standards relevant to your region. Ensure the selected part number aligns with the intended thermal and electrical requirements of the final assembly design.

Selection Notes

Select this component when applications require robust performance under high ambient temperatures and demand minimized on-state losses. Consider the 80V rating and 100A current capability alongside the specific gate drive voltage available in the system to ensure optimal RDS(ON) performance.

Part Context

This MOSFET belongs to Diodes Incorporated's new generation series designed to minimize RDS(ON) while maintaining superior switching performance. It is housed in the PowerDI5060-8/SWP package, which provides efficient thermal dissipation capabilities suitable for compact power management designs.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume functional equivalence based solely on similar package types or voltage ratings without cross-referencing specific electrical characteristics.

FAQ

Is the DMTH84M1SPSW-13 qualified for automotive applications?

For automotive applications requiring specific change control, AEC-Q qualification, PPAP capability, and manufacturing in IATF 16949 certified facilities, contact Diodes Incorporated directly.