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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V U-DFN2020-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：10.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：11mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：52.6 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：2508 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：810mW (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (SWP)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMW2013UFDEQ-13 is an N-channel MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) rating of 20V and supports a continuous drain current of 10.5A. The device utilizes a U-DFN2020-6 surface-mount package with an exposed pad. Key electrical characteristics include a gate charge of 28.7nC at 4.5V and 52.6nC at 8V, with an on-resistance of 11mΩ at 4.5V VGS. It operates within standard temperature ranges and is supplied in reel packaging.
Feature Summary
- N-channel enhancement mode MOSFET technology
- Low on-resistance for efficient power switching
- Compact U-DFN2020-6 surface-mount footprint
Applications
- DC-DC converter circuits
- Power management modules
- Battery protection systems
Procurement Notes
Verify the specific ordering suffix to ensure correct packaging configuration. Confirm that the component meets required automotive or industrial qualification standards if applicable. Check for RoHS compliance documentation prior to integration. Ensure ESD handling procedures are followed during assembly due to the sensitive nature of MOSFET gates.
Selection Notes
Select this component when a low-voltage, high-current N-channel switch is required in a compact form factor. The 20V rating suits low-side switching applications. Evaluate thermal performance based on the U-DFN2020-6 package's thermal resistance. Compare gate charge specifications against driver capabilities to optimize switching speed and minimize losses.
Part Context
This part belongs to Diodes Incorporated's discrete semiconductor portfolio, specifically within the MOSFET category. It is designed for general-purpose switching applications requiring small outline packages. The U-DFN series offers improved thermal performance compared to traditional plastic packages while maintaining a minimal board area footprint.
Replacement Considerations
Consult official manufacturer substitution guides for verified equivalents. Cross-reference pinouts and thermal characteristics carefully. Verify that alternative components meet the same 20V BVDSS and 10.5A Id requirements without compromising package compatibility.
