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Product Detailed Parameters
- Description：SICFET N-CH 1200V TO-247
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V, 18V
- Rds On (Max) @ Id, Vgs：23mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id：3.6V @ 17.7mA
- Gate Charge (Qg) (Max) @ Vgs：217 nC @ 18 V
- Vgs (Max)：+22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：3962 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：349W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-4
- Package / Case：TO-247-4
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Overview
The DMWSH120H23SM4 is a silicon carbide (SiC) MOSFET manufactured by Diodes Incorporated. It features an N-channel configuration housed in a TO-247 package with through-hole mounting. The device supports a drain-source breakdown voltage exceeding 1000V and operates within a temperature range of -55°C to +175°C. It is supplied in tubes containing 30 pieces.
Feature Summary
- Utilizes silicon carbide technology for enhanced thermal performance
- Designed for high-voltage power switching applications
- Supports through-hole installation via TO-247 package
Applications
- High-efficiency power conversion systems
- Industrial motor drives
- Uninterruptible power supplies
Procurement Notes
Verify the specific datasheet version and compliance documentation directly with Diodes Incorporated before integration. Confirm that the TO-247 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified power dissipation limits under your operating conditions.
Selection Notes
Select this component when designing circuits requiring robust high-voltage handling capabilities with silicon carbide advantages. Consider the TO-247 package for applications needing reliable through-hole connections. Evaluate thermal resistance parameters against your heatsinking strategy to ensure safe operation at elevated temperatures.
Part Context
This part belongs to the DMWSH120H series of SiC MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-resistance while maintaining excellent switching performance. The series targets demanding power electronics environments where efficiency and reliability are critical.
Replacement Considerations
Consult official substitution lists from Diodes Incorporated for verified alternatives. Cross-reference pinouts, electrical ratings, and package dimensions carefully. Do not assume compatibility with other manufacturers' parts without explicit manufacturer confirmation.
