DMWSH120H28SM3Q

$28.04

Description：SICFET N-CH 1200V TO-247
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:da280846858d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V TO-247
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：97.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：28.5mOhm @ 50A, 15V
Vgs(th) (Max) @ Id：3.6V @ 17.7mA
Gate Charge (Qg) (Max) @ Vgs：175 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：3905 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：405W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247
Package / Case：TO-247-3

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DMWSH120H28SM3Q

Overview

The DMWSH120H28SM3Q is a 1200V N-channel Silicon Carbide power MOSFET designed for high-efficiency power management. It features a maximum drain-source voltage of 1200V and a typical on-resistance of 20mΩ at VGS=15V, with a maximum rating of 28.5mΩ. The device supports a continuous drain current of 97.4A at +25°C and 68.8A at +100°C. Packaged in a TO247 standard carrier, it operates within a junction temperature range of -55°C to +175°C.

Feature Summary

Low on-state resistance combined with superior switching performance
High breakdown voltage rating suitable for demanding power applications
Low input capacitance for efficient drive requirements
Qualified for automotive applications with AEC-Q101 certification

Applications

EV high-power DC-DC converters
EV charging systems
AC-DC traction inverters
Automotive motor drivers

Procurement Notes

Verify the specific ordering suffix 'Q' corresponds to the required automotive qualification level, including AEC-Q101 compliance and PPAP capability. Confirm that the TO247 tube packaging meets your assembly line handling specifications. Ensure the design accounts for the specified thermal resistance values under your actual heatsinking conditions.

Selection Notes

Select this component when designing circuits requiring high-voltage isolation and low conduction losses in compact footprints. Evaluate the gate threshold voltage characteristics against your driver output levels. Consider the total gate charge and switching energy parameters to optimize driver strength and minimize switching losses in high-frequency topologies.

Part Context

This part belongs to Diodes Incorporated's silicon carbide MOSFET portfolio, specifically engineered for automotive-grade reliability. It utilizes a standard TO247 package to facilitate robust thermal dissipation. The product is manufactured in IATF 16949 certified facilities to support strict automotive supply chain standards.