ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：SICFET N-CH 1200V TO-247
- Series：-
- Mfr：Diodes Incorporated
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：72.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：43mOhm @ 40A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 11.5mA
- Gate Charge (Qg) (Max) @ Vgs：105 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：2187 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：341W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247
- Package / Case：TO-247-3
Download product information
Overview
The DMWSH120H43SM3 is a 1200V N-channel Silicon Carbide (SiC) power MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 1200V and a continuous drain current of 72.7A at 25°C. The device exhibits a typical on-resistance of 33mΩ and a maximum of 43mΩ at VGS=15V. Key electrical parameters include a gate charge of 105nC, input capacitance of 2187pF, and a total power dissipation of 341W. Operating temperatures range from -55°C to +175°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
- Features low input capacitance and a high breakdown voltage rating suitable for demanding power environments.
- Constructed with a lead-free finish that is RoHS compliant, halogen-free, and antimony-free.
Applications
- EV high-power DC-DC converters
- EV charging systems
- Solar inverters
- AC-DC traction inverters
- Automotive motor drivers
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to ensure correct package type and packing quantity. Confirm compliance requirements such as RoHS and REACH status directly with the supplier or datasheet notes before procurement. Ensure the component meets automotive qualification standards if required for the intended application environment.
Selection Notes
Select this component based on its 1200V rating and 72.7A continuous current capability at 25°C. Evaluate thermal management needs using the specified junction-to-case thermal resistance. Consider the gate threshold voltage and total gate charge when designing the driver circuitry to optimize switching losses and efficiency in high-frequency operations.
Part Context
This part belongs to the DMWSH series of silicon carbide MOSFETs from Diodes Incorporated. These devices are engineered for high-voltage power conversion systems requiring robust performance under extreme thermal conditions. The TO247 package provides a standardized form factor for through-hole mounting in industrial and automotive power modules.
Replacement Considerations
Consult official Diodes Incorporated substitution guides for verified alternatives within the DMWSH family. Cross-reference pinouts and thermal characteristics carefully when considering competitors' parts to ensure mechanical and electrical compatibility without redesigning the PCB layout.
FAQ
What is the maximum static gate-source voltage?
The maximum static gate-source voltage is +15V/-4V.
Is this device qualified for automotive applications?
For automotive applications requiring specific change control and AEC-Q100/101/104/200 qualification, customers must contact Diodes Incorporated representatives directly.
