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Product Detailed Parameters
- Description：SICFET N-CH 1200V TO-247
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：38.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：90mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id：3.5V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：54.6 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1078 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：197W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Overview
The DMWSH120H90SCT7-13 is a Silicon Carbide (SiC) MOSFET manufactured by Diodes Incorporated. It features an N-channel configuration housed in a TO-263-7 surface-mount package. The device supports a drain-source breakdown voltage exceeding 1000V and operates with a maximum junction temperature of +175°C. Designed for high-efficiency power conversion, it utilizes advanced SiC technology to minimize conduction losses while maintaining robust switching performance in demanding thermal environments.
Feature Summary
- Utilizes Silicon Carbide semiconductor technology for superior thermal stability and efficiency
- Engineered for high-voltage applications with breakdown capabilities exceeding 1000V
- Optimized for low on-resistance to reduce conduction losses in power circuits
Applications
- High-frequency power supply designs
- Industrial motor drive systems
- Solar inverter topologies
Procurement Notes
Verify the specific suffix 'T&R 0.8K' against official Diodes Incorporated documentation to confirm tape-and-reel packaging quantities. Ensure compatibility with TO-263-7 footprint requirements during PCB layout. Cross-reference RoHS compliance status directly from the manufacturer's latest datasheet before integration into regulated products.
Selection Notes
Select this component when designing circuits requiring high-voltage handling with efficient thermal management. The TO-263-7 package facilitates surface-mount assembly, suitable for automated manufacturing processes. Evaluate thermal resistance characteristics against system heat dissipation capabilities to ensure reliable operation at elevated temperatures up to 175°C.
Part Context
This part belongs to the DMWSH120H series of SiC MOSFETs from Diodes Incorporated. The series is designed to maximize conductivity while preserving switching integrity. Similar variants include DMWSH120H90SM4Q, which shares electrical specifications but differs in package type and mounting style.
Replacement Considerations
Direct substitutes within the same family include DMWSH120H90SM4Q, though package differences must be accounted for. Verify pinout compatibility and thermal pad configurations when transitioning between TO-263-7 and TO-247-4 packages.
