DMWSH120H90SM4

$9.27

Description：SICFET N-CH 1200V TO-247
Series：-
Mfr：Diodes Incorporated
Package：Tube

SKU:2261ba048c46 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V TO-247
Series：-
Mfr：Diodes Incorporated
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：97.5mOhm @ 20A, 15V
Vgs(th) (Max) @ Id：3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：51.1 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1112 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：235W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

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DMWSH120H90SM4

Overview

The DMWSH120H90SM4 is a 1200V N-channel Silicon Carbide (SiC) power MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 1200V and a continuous drain current of 40A at 25°C case temperature. The device exhibits a typical static on-resistance of 75mΩ, with a maximum rating of 97.5mΩ at VGS=15V and ID=20A. Operating within a junction temperature range of -55°C to +175°C, it utilizes a TO-247-4 through-hole package.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
Features low input capacitance and a high BVDSS rating suitable for demanding power applications.
Constructed with a molded plastic 'Green' compound that is halogen-free and antimony-free.

Applications

EV high-power DC-DC converters
EV charging systems
AC-DC traction inverters
Automotive motor drivers

Procurement Notes

Verify the specific part number against official manufacturer documentation to ensure correct component identification. Confirm that the required electrical parameters align with your design specifications before procurement. Check for any regional distribution restrictions or compliance requirements relevant to your location. Ensure proper handling procedures are followed due to the semiconductor nature of the component.

Selection Notes

Select this component when designing circuits requiring high-voltage tolerance and efficient thermal management. Consider the TO-247-4 package for through-hole mounting solutions. Evaluate the thermal resistance characteristics relative to your heatsinking strategy. Verify gate drive compatibility with the specified threshold and maximum voltage ratings.

Part Context

This component belongs to the SiC MOSFET category from Diodes Incorporated. It is designed for high-power applications where efficiency and thermal performance are critical. The device offers a robust solution for modern power electronics, leveraging silicon carbide technology for improved conductivity and switching speeds compared to traditional silicon devices.

Replacement Considerations

An automotive-compliant version of this component is available under the separate datasheet designation DMWSH120H90SM4Q. Verify if automotive qualification standards are required for your specific application before selecting this variant.