SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DN1509K1-G is an N-Channel, Depletion-Mode, Vertical DMOS FET manufactured by Microchip Technology. It features a 90V drain-to-source breakdown voltage and a maximum on-resistance of 6.0 Ohms at 200mA. The device operates within a temperature range of -55°C to +150°C and dissipates up to 490mW in its 5-lead SOT-23 package.
Verify the specific K1 suffix indicates the 5-lead SOT-23 package configuration. Confirm the G suffix denotes lead-free and RoHS-compliant packaging status. Ensure the ordering quantity aligns with the standard reel size of 3000 units per manufacturer specifications.
Select this component when a normally-on depletion-mode switch is required. The 90V rating suits low-voltage DC applications. The SOT-23 package offers compact surface-mount integration. Verify that the 6.0 Ohm on-resistance meets the circuit's conduction loss requirements.
This part belongs to the DN1509 family of Vertical DMOS Field-Effect Transistors. The K1 suffix specifically designates the 5-lead SOT-23 package variant. Other variants include the TO-243AA (SOT-89) package. All share the same core electrical characteristics defined in the datasheet.
DN1509N8-G: Identical electrical performance housed in a TO-243AA (SOT-89) 3-lead package instead of the SOT-23 form factor.