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Product Detailed Parameters
- Description：MOSFET N-CH 90V 360MA TO243AA
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：90 V
- Current - Continuous Drain (Id) @ 25°C：360mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：0V
- Rds On (Max) @ Id, Vgs：6Ohm @ 200mA, 0V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：150 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-243AA (SOT-89)
- Package / Case：TO-243AA
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Overview
The DN1509N8-G is an N-channel, depletion-mode vertical DMOS FET manufactured by Microchip Technology. It features a drain-to-source breakdown voltage of 90 V and a maximum on-resistance of 6.0 Ω at 25°C. The device supports a saturated drain current of up to 300 mA (typical 540 mA) with a gate threshold voltage range of -1.8 V to -3.5 V. Thermal resistance in the TO-243AA package is 78°C/W, allowing for continuous drain currents up to 360 mA. Operating temperatures span from -55°C to +150°C.
Feature Summary
- Utilizes advanced vertical DMOS structure for high power-handling capabilities combined with MOS high-input impedance.
- Inherently free from thermal runaway and thermally-induced secondary breakdown due to positive-temperature coefficient characteristics.
- Designed for fast switching speeds with low input capacitance and low leakage currents.
Applications
- Normally-on switches
- Battery operated systems
- Linear amplifiers
- Constant current sources
Procurement Notes
Verify the specific suffix 'N8' corresponds to the TO-243AA (SOT-89) package configuration as defined in the product identification system. Confirm that the 'G' designation indicates lead-free and RoHS-compliant packaging. Ensure the ordering media type matches the required reel quantity for this specific package variant before finalizing procurement.
Selection Notes
Select this component when a normally-on switch or amplifier requires high input impedance and immunity to secondary breakdown. The 90V rating suits low-voltage applications where bipolar transistors might suffer from thermal instability. Verify that the 6.0Ω on-resistance meets the conduction loss requirements for the intended load current within the specified temperature range.
Part Context
This part belongs to Microchip's family of N-channel, depletion-mode vertical DMOS Field-Effect Transistors. These devices are engineered to provide the robust power handling of bipolar transistors while maintaining the distinct advantages of MOS technology, specifically high input impedance and stable operation across varying thermal conditions without risk of thermal runaway.
Replacement Considerations
DN1509K1-G: Identical electrical specifications but housed in a 5-lead SOT-23 package instead of the TO-243AA form factor.
FAQ
What is the typical saturated drain current (IDSS) for the DN1509?
The typical saturated drain current is 540 mA when measured at VGS = 0V and VDS = 25V.
How does the device handle thermal stress?
The device is free from thermal runaway and thermally-induced secondary breakdown due to the positive-temperature coefficient inherent in its MOS structure.
