DN2450K4-G

DN2450K4-G

$0.71
  • Description:MOSFET N-CH 500V 350MA TO252
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:1ed61383661e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 500V 350MA TO252
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel, Depletion Mode
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:350mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On):0V
  • Rds On (Max) @ Id, Vgs:10Ohm @ 300mA, 0V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252 (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

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DN2450K4-G

Overview

The DN2450K4-G is an N-Channel, Depletion-Mode Vertical DMOS FET manufactured by Microchip Technology. It features a TO-252 (D-PAK) package and utilizes a silicon-gate manufacturing process. Key electrical parameters include a drain-to-source breakdown voltage of 500 V, a maximum static on-resistance of 10 Ω at VGS=0V and ID=300mA, and a saturated drain current of 700 mA. The device operates within a temperature range of -55°C to +150°C with a power dissipation rating of 2.5 W.

Feature Summary

  • High-input impedance and low input capacitance for efficient signal handling
  • Fast switching speeds suitable for high-frequency applications
  • Free from secondary breakdown due to positive-temperature coefficient characteristics

Applications

  • Normally-on switches
  • Voltage to current converters
  • Constant current sources
  • Current and voltage limiters

Procurement Notes

Verify the specific ordering suffix 'K4' corresponds to the TO-252 (D-PAK) package configuration required for your design. Confirm that the 'G' suffix indicates lead-free and RoHS-compliant packaging as specified in the product identification system. Ensure thermal management aligns with the 81°C/W junction-to-ambient resistance characteristic for the D-PAK package.

Selection Notes

Select this component when a normally-on depletion-mode operation is required with high-voltage capability up to 500 V. Consider the TO-252 package for surface-mount assembly needs where higher power dissipation compared to smaller packages is necessary. Evaluate the 10 Ω on-resistance against circuit load requirements to ensure appropriate conduction losses.

Part Context

This part belongs to the DN2450 family of vertical DMOS field-effect transistors. The K4 suffix specifically denotes the TO-252 (D-PAK) surface-mount package variant, distinguishing it from other package options like the TO-243AA (SOT-89). The G suffix confirms environmental compliance.

Replacement Considerations

DN2450N8-G

DN2450K4-GDN2450K4-G
$0.71
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