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The DN2450K4-G is an N-Channel, Depletion-Mode Vertical DMOS FET manufactured by Microchip Technology. It features a TO-252 (D-PAK) package and utilizes a silicon-gate manufacturing process. Key electrical parameters include a drain-to-source breakdown voltage of 500 V, a maximum static on-resistance of 10 Ω at VGS=0V and ID=300mA, and a saturated drain current of 700 mA. The device operates within a temperature range of -55°C to +150°C with a power dissipation rating of 2.5 W.
Verify the specific ordering suffix 'K4' corresponds to the TO-252 (D-PAK) package configuration required for your design. Confirm that the 'G' suffix indicates lead-free and RoHS-compliant packaging as specified in the product identification system. Ensure thermal management aligns with the 81°C/W junction-to-ambient resistance characteristic for the D-PAK package.
Select this component when a normally-on depletion-mode operation is required with high-voltage capability up to 500 V. Consider the TO-252 package for surface-mount assembly needs where higher power dissipation compared to smaller packages is necessary. Evaluate the 10 Ω on-resistance against circuit load requirements to ensure appropriate conduction losses.
This part belongs to the DN2450 family of vertical DMOS field-effect transistors. The K4 suffix specifically denotes the TO-252 (D-PAK) surface-mount package variant, distinguishing it from other package options like the TO-243AA (SOT-89). The G suffix confirms environmental compliance.
DN2450N8-G