DN2470K4-G

$0.90

Description：MOSFET N-CH 700V 170MA TO252
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a546ff80d362 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 700V 170MA TO252
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：700 V
Current - Continuous Drain (Id) @ 25°C：170mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：0V
Rds On (Max) @ Id, Vgs：42Ohm @ 100mA, 0V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：540 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DN2470K4-G

Overview

The DN2470K4-G is an N-Channel, Depletion-Mode, Vertical DMOS FET manufactured by Microchip Technology. It features a TO-252 (DPAK) package with a drain-to-source breakdown voltage of 700 V and a maximum static on-resistance of 42 Ω. The device supports continuous drain current up to 170 mA and operates within a temperature range of -55°C to +150°C.

Feature Summary

Utilizes advanced vertical DMOS structure for high-input impedance and low input capacitance
Free from thermal runaway and thermally-induced secondary breakdown
Positive-temperature coefficient inherent in MOS devices
Fast switching speeds suitable for amplifying applications

Applications

Normally-on switches
Solid state relays
Linear amplifiers
Constant current sources
Battery operated systems

Procurement Notes

Verify the component datasheet revision A (October 2015) against your specific design requirements. Confirm that the TO-252 package dimensions and pinout align with your PCB layout. Ensure thermal management strategies account for the specified thermal resistance values under your operating conditions.

Selection Notes

Select this component when a normally-on switch or amplifier requires high breakdown voltage combined with low leakage characteristics. The depletion-mode operation allows for direct control without complex biasing circuits. Evaluate the 42 Ω on-resistance against your power dissipation limits at the intended operating current.

Part Context

This part belongs to Microchip's Vertical DMOS FET family, designed for robust performance in switching and linear applications. The DN2470 specifically targets scenarios demanding high voltage handling with the reliability benefits of silicon-gate manufacturing processes.