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Product Detailed Parameters
- Description：MOSFET N-CH 300V 200MA TO243AA
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：300 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：0V
- Rds On (Max) @ Id, Vgs：12Ohm @ 150mA, 0V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：300 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-243AA (SOT-89)
- Package / Case：TO-243AA
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Overview
The DN2530N8-G is a single N-Channel, depletion-mode Vertical DMOS FET manufactured by Microchip Technology. It features a TO-243AA (SOT-89) surface-mount package with a drain-to-source breakdown voltage of 300 V and a maximum static on-resistance of 12 Ohms at 150 mA. The device supports a continuous drain current of 200 mA and dissipates up to 1.6 W at 25°C ambient temperature. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Utilizes an advanced vertical DMOS structure for high power-handling capabilities combined with MOS high-input impedance.
- Inherently free from thermal runaway and thermally-induced secondary breakdown due to positive-temperature coefficient characteristics.
- Designed for fast switching speeds with low input capacitance and low leakage currents.
Applications
- Normally-on switches
- Solid state relays
- Linear amplifiers
- Constant current sources
Procurement Notes
Verify the specific suffix 'N8' confirms the TO-243AA (SOT-89) SMD package configuration rather than the through-hole variant. Ensure the 'G' designation indicates lead-free/ROHS-compliant packaging as specified in the product identification system. Confirm that the media type corresponds to the reel quantity associated with this specific package style.
Selection Notes
Select this component when a normally-on (depletion-mode) switch or amplifier is required in a compact surface-mount footprint. The 300 V rating and 12 Ohm on-resistance make it suitable for moderate voltage applications where low gate drive complexity is beneficial. Consider the 1.6 W power dissipation limit and thermal resistance when designing heat management solutions.
Part Context
This part belongs to the DN2530 family of N-Channel Depletion-Mode Vertical DMOS FETs. The 'N8' suffix specifically denotes the TO-243AA (SOT-89) 3-lead surface-mount package, distinguishing it from the TO-92 through-hole version (N3). The 'G' suffix indicates environmental compliance.
Replacement Considerations
DN2530N3-G
FAQ
What is the default state of the DN2530N8-G transistor?
The DN2530N8-G is a depletion-mode device, meaning it is a normally-on transistor that conducts current between the drain and source when the gate-to-source voltage is zero.
How does the DN2530 handle thermal stress?
The device utilizes a vertical DMOS structure that provides a positive-temperature coefficient, making it inherently free from thermal runaway and thermally-induced secondary breakdown.
