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Product Detailed Parameters
- Description：MOSFET N-CH 350V 120MA TO92
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：350 V
- Current - Continuous Drain (Id) @ 25°C：120mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：0V
- Rds On (Max) @ Id, Vgs：25Ohm @ 120mA, 0V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：300 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92 (TO-226)
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
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Overview
The DN2535N3-G-P003 is an N-Channel Depletion-mode Vertical DMOS FET manufactured by Microchip Technology. It features a 350V drain-to-source breakdown voltage and a maximum on-resistance of 25 Ohms at 120 mA. The device operates within a temperature range of -55°C to +150°C and utilizes a 3-lead TO-92 package with through-hole mounting. Key electrical parameters include a gate-to-source voltage limit of ±20V, saturated drain current of 150 mA, and typical switching times of 10 ns turn-on delay and 15 ns rise time.
Feature Summary
- Utilizes advanced vertical DMOS structure for high input impedance and fast switching speeds
- Free from secondary breakdown and thermal runaway due to positive-temperature coefficient
- Low input capacitance and low leakage currents for efficient signal handling
Applications
- Normally-on switches
- Solid-state relays
- Linear amplifiers
- Constant-current sources
- Telecommunication switches
Procurement Notes
Verify the specific ordering suffix P003 corresponds to the 2000/Reel media type for the N3 (TO-92) package configuration. Confirm RoHS compliance status via the 'G' environmental designation in the part number. Ensure the procurement channel provides official Microchip documentation to validate the component's authenticity and revision level against DS20005541A.
Selection Notes
Select this component for applications requiring normally-on behavior with high-voltage capability up to 350V. The TO-92 package limits continuous power dissipation to 1W, making it suitable for low-power switching or linear regulation tasks. Consider the 25 Ohm on-resistance when designing for minimal voltage drop at the target operating current of 120 mA.
Part Context
This device belongs to the DN2535 family of N-Channel Depletion-mode Vertical DMOS FETs. It shares core electrical characteristics with other variants like the DN2535N5-G but differs in physical packaging and thermal performance. The N3 designation specifically indicates the 3-lead TO-92 form factor, which offers lower thermal dissipation compared to larger packages like TO-220.
Replacement Considerations
DN2535N3-G-P005
FAQ
What is the default state of the DN2535N3-G-P003?
It is a depletion-mode (normally-on) transistor, meaning it conducts current between the drain and source when the gate-to-source voltage is zero.
How does the device handle thermal stress?
The device is free from thermal runaway and thermally induced secondary breakdown due to the positive-temperature coefficient inherent in its MOS structure.
