DN2540N3-G

DN2540N3-G

$0.82
  • Description:MOSFET N-CH 400V 120MA TO92
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bag

SKU:f63bebf71e49 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 400V 120MA TO92
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bag
  • FET Type:N-Channel, Depletion Mode
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):400 V
  • Current - Continuous Drain (Id) @ 25°C:120mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On):0V
  • Rds On (Max) @ Id, Vgs:25Ohm @ 120mA, 0V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:300 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-92 (TO-226)
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)

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DN2540N3-G

Overview

The DN2540N3-G is an N-channel depletion-mode vertical DMOS FET in a TO-92 package. It features a drain-to-source breakdown voltage of 400V and a maximum on-resistance of 25Ω at VGS=0V. The device supports a continuous drain current of 120mA with a power dissipation of 1W. Operating temperature ranges from -55°C to +150°C, with gate-to-source voltage limits of ±20V.

Feature Summary

  • Utilizes advanced vertical DMOS structure for high input impedance and low input capacitance
  • Inherently free from thermal runaway and thermally-induced secondary breakdown due to positive temperature coefficient
  • Designed for fast switching speeds suitable for high-frequency applications

Applications

  • Normally-on switches
  • Solid state relays
  • Linear amplifiers
  • Constant current sources
  • Power supply circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type, as variations exist for bulk, reel, or tube configurations. Confirm RoHS compliance status and lead-free designation requirements prior to procurement to ensure alignment with project specifications.

Selection Notes

Select this component for designs requiring normally-on behavior with high voltage blocking capabilities. Ensure the application accounts for the 25Ω on-resistance at zero gate bias. Verify that the 1W power dissipation limit in the TO-92 package meets the thermal requirements of the target environment.

Part Context

Manufactured by Microchip Technology (originally Supertex), this part belongs to a family of vertical DMOS field-effect transistors. The DN2540 series includes variants with different packages such as TO-220 and SOT-89, offering flexibility for various power handling and mounting needs while maintaining similar electrical characteristics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternatives based on matching N-channel depletion mode operation, 400V BVDSX rating, and TO-92 package compatibility.

DN2540N3-GDN2540N3-G
$0.82
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