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The DN2540N3-G is an N-channel depletion-mode vertical DMOS FET in a TO-92 package. It features a drain-to-source breakdown voltage of 400V and a maximum on-resistance of 25Ω at VGS=0V. The device supports a continuous drain current of 120mA with a power dissipation of 1W. Operating temperature ranges from -55°C to +150°C, with gate-to-source voltage limits of ±20V.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type, as variations exist for bulk, reel, or tube configurations. Confirm RoHS compliance status and lead-free designation requirements prior to procurement to ensure alignment with project specifications.
Select this component for designs requiring normally-on behavior with high voltage blocking capabilities. Ensure the application accounts for the 25Ω on-resistance at zero gate bias. Verify that the 1W power dissipation limit in the TO-92 package meets the thermal requirements of the target environment.
Manufactured by Microchip Technology (originally Supertex), this part belongs to a family of vertical DMOS field-effect transistors. The DN2540 series includes variants with different packages such as TO-220 and SOT-89, offering flexibility for various power handling and mounting needs while maintaining similar electrical characteristics.
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternatives based on matching N-channel depletion mode operation, 400V BVDSX rating, and TO-92 package compatibility.