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Product Detailed Parameters
- Description：MOSFET N-CH 400V 170MA TO243AA
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：400 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：0V
- Rds On (Max) @ Id, Vgs：25Ohm @ 120mA, 0V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：300 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-243AA (SOT-89)
- Package / Case：TO-243AA
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Overview
The DN2540N8-G is an N-Channel Depletion Mode Vertical DMOS FET manufactured by Microchip Technology. It features a TO-243AA (SOT-89) package with a drain-to-source breakdown voltage of 400V and a maximum on-resistance of 25 Ohms. The device supports a continuous drain current of 170mA and dissipates up to 1.6W of power. Operating temperatures range from -55°C to +150°C, with gate-to-source voltage limits of ±20V.
Feature Summary
- Utilizes advanced vertical DMOS structure for high input impedance and low input capacitance
- Free from thermal runaway and thermally-induced secondary breakdown due to positive temperature coefficient
- Designed for fast switching speeds suitable for high-frequency applications
Applications
- Normally-on switches
- Solid state relays
- Linear amplifiers
- Constant current sources
- Power supply circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and packing method. Ensure compliance with RoHS requirements as indicated by the 'G' suffix. Confirm lead-free status and environmental specifications prior to procurement to match design constraints.
Selection Notes
Select this component for designs requiring normally-on behavior with high voltage handling capabilities. Consider the SOT-89 package for surface mount implementations where space is limited. Evaluate thermal resistance characteristics relative to the expected power dissipation in the target application environment.
Part Context
This part belongs to the DN2540 series of depletion mode MOSFETs originally developed by Supertex Inc. and now produced by Microchip Technology. The series utilizes silicon-gate manufacturing processes to combine bipolar power handling with MOS input characteristics.
Replacement Considerations
DN2540N3-G
FAQ
What is the default state of the DN2540N8-G transistor?
The DN2540N8-G is a depletion mode device, meaning it is normally-on when the gate-to-source voltage is zero.
Does the DN2540N8-G suffer from thermal runaway?
No, the device is free from thermal runaway and thermally-induced secondary breakdown due to its positive temperature coefficient inherent in MOS structures.
