DN3135K1-G

$0.59

Description：MOSFET N-CH 350V 72MA SOT23-3
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:578fb26fe403 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 350V 72MA SOT23-3
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：350 V
Current - Continuous Drain (Id) @ 25°C：72mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：0V
Rds On (Max) @ Id, Vgs：35Ohm @ 150mA, 0V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：120 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DN3135K1-G

Overview

The DN3135K1-G is an N-Channel Depletion-mode Vertical DMOS FET manufactured by Microchip Technology. It features a 350V drain-to-source breakdown voltage and a maximum on-resistance of 35 Ohms at VGS=0V. The device operates with a continuous drain current of 72mA in the SOT-23 package, supporting a power dissipation of 360mW. It exhibits fast switching characteristics, including a turn-on delay time of 10ns and a fall time of 20ns. The component is designed for high input impedance applications and operates within an ambient temperature range of -55°C to +150°C.

Feature Summary

Utilizes advanced vertical DMOS structure for high input impedance and low input capacitance
Free from secondary breakdown and thermal runaway due to positive temperature coefficient
Fast switching speeds suitable for high-frequency applications
Low threshold voltage design optimized for normally-on operation

Applications

Normally-on switches
Solid state relays
Linear amplifiers
Constant-current sources
Power supply circuits

Procurement Notes

Verify the specific ordering suffix K1 corresponds to the 3-lead SOT-23 package configuration as defined in the product identification system. Confirm that the G suffix indicates lead-free and RoHS-compliant packaging standards. Ensure the procurement documentation explicitly references datasheet DS20005703A to validate electrical parameters against the manufacturer's specifications.

Selection Notes

Select this component when a normally-on (depletion-mode) switch or amplifier is required with high breakdown voltage capabilities. The DN3135K1-G is appropriate for designs needing low gate drive requirements and immunity to thermal runaway. Consider the SOT-23 package constraints regarding thermal resistance and continuous current limits during circuit layout planning.

Part Context

This part belongs to the DN3135 family of N-Channel Depletion-mode Vertical DMOS FETs produced by Microchip Technology. The K1 suffix specifically denotes the 3-lead SOT-23 (TO-236AB) surface-mount package variant. The G suffix confirms compliance with environmental standards. This series is engineered for applications demanding the reliability and performance characteristics of bipolar transistors combined with MOSFET advantages.