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Product Detailed Parameters
- Description：MOSFET N-CH 250V 360MA TO243AA
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：360mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：0V
- Rds On (Max) @ Id, Vgs：6Ohm @ 200mA, 0V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-243AA (SOT-89)
- Package / Case：TO-243AA
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Overview
The DN3525N8-G is an N-Channel Depletion-mode Vertical DMOS FET manufactured by Microchip Technology. It features a 250 V drain-to-source breakdown voltage and a maximum on-resistance of 6 Ω at 200 mA. The device operates with a continuous drain current of 360 mA and dissipates up to 1.6 W in a 3-lead SOT-89 package. It exhibits low input capacitance, fast switching speeds, and a positive temperature coefficient for thermal stability.
Feature Summary
- Utilizes advanced vertical DMOS structure for high power handling capabilities
- Free from secondary breakdown and thermally induced failure modes
- Provides high input impedance with low leakage currents
- Features fast switching speeds suitable for high-frequency applications
Applications
- Normally-On Switches
- Solid-State Relays
- Constant-Current Sources
- Power Supply Circuits
Procurement Notes
Verify the component matches the specific depletion-mode requirement, as standard enhancement-mode MOSFETs are electrically incompatible. Confirm the SOT-89 package orientation and pinout alignment during assembly. Ensure the design accommodates the normally-on state at zero gate bias. Validate that the operating voltage does not exceed the absolute maximum ratings under all transient conditions.
Selection Notes
Select this component when a normally-on switch or constant-current source is required without external biasing. The vertical DMOS technology offers superior thermal stability compared to bipolar transistors. Consider the 6 Ω on-resistance for conduction loss calculations. Verify that the 250 V breakdown voltage meets the circuit's peak voltage requirements.
Part Context
This part belongs to Microchip's family of N-Channel Depletion-mode Vertical DMOS FETs. These devices combine the high input impedance of MOS structures with the power handling of bipolar transistors. The DN3525 specifically targets applications requiring high breakdown voltage and fast switching in a compact surface-mount package.
Replacement Considerations
Direct substitutes must be N-Channel Depletion-mode Vertical DMOS FETs with similar voltage and current ratings. Verify pin compatibility and thermal resistance characteristics before substitution.
