DN3535N8-G

$0.77

Description：MOSFET N-CH 350V 230MA TO243AA
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:41848aa082f1 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 350V 230MA TO243AA
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：350 V
Current - Continuous Drain (Id) @ 25°C：230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)：0V
Rds On (Max) @ Id, Vgs：10Ohm @ 150mA, 0V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：360 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-243AA (SOT-89)
Package / Case：TO-243AA

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DN3535N8-G

Overview

The DN3535N8-G is an N-channel depletion-mode vertical DMOS FET manufactured by Microchip Technology. It features a TO-243AA (SOT-89) surface-mount package and utilizes silicon-gate manufacturing. The device provides a drain-to-source breakdown voltage of 350V, a maximum on-resistance of 10Ω at VGS=0V, and a saturated drain current of 200mA. It operates within a temperature range of -55°C to +150°C with a continuous power dissipation of 1.6W.

Feature Summary

High input impedance and low input capacitance for efficient signal handling
Fast switching speeds suitable for high-frequency applications
Free from secondary breakdown and thermal runaway due to positive temperature coefficient
Low on-resistance and leakage currents

Applications

Normally-on switches
Solid state relays
Linear amplifiers
Constant current sources
Power supply circuits

Procurement Notes

Verify the component's lead-free status and RoHS compliance through official datasheets or manufacturer documentation before procurement. Confirm that the ordering suffix 'N8' corresponds to the specified reel packing quantity and SOT-89 package variant. Ensure all electrical parameters align with design requirements.

Selection Notes

Select this component for designs requiring normally-on operation with high voltage tolerance. Consider the 10Ω on-resistance and 200mA saturation current limits when sizing the circuit. Evaluate the thermal resistance characteristics for adequate heat dissipation in the target application environment.

Part Context

This part belongs to the DN3535 series of N-channel depletion-mode MOSFETs. It is designed using an advanced vertical DMOS structure to combine bipolar-like power handling with MOS high input impedance. The device is intended for switching and amplifying applications where fast response and high breakdown voltage are critical.

Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Cross-reference specifications such as breakdown voltage, on-resistance, and package type to ensure compatibility.