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The DS1210N+ is a nonvolatile controller chip designed to convert standard CMOS RAM into nonvolatile memory. It operates within a supply voltage range of 4.75V to 5.5V and consumes 5mA of working power current. The device supports an industrial temperature range from -40°C to +85°C and is housed in an 8-pin PDIP package. Key electrical parameters include a battery current consumption of less than 100nA, a maximum propagation delay of 20ns for the Chip Enable signal, and a typical forward voltage drop of less than 0.3V on the VCC switch.
Verify that the specific part number matches the required industrial temperature grade (-40°C to +85°C) indicated by the 'N' suffix. Confirm RoHS compliance status as denoted by the '+' suffix. Ensure the 8-pin PDIP package footprint aligns with the target PCB design. Check for end-of-life or obsolescence status prior to finalizing procurement plans.
Select this component when converting external CMOS RAM to nonvolatile storage is required. Choose the N variant for industrial temperature environments. Verify that the system's memory interface timing meets the 20ns maximum propagation delay requirement. Ensure the application can accommodate the necessary battery connections for backup functionality.
The DS1210 belongs to the Maxim Integrated (now Analog Devices) family of nonvolatile controllers. These devices are specifically engineered to manage power transitions between main supplies and backup batteries. The N suffix denotes the industrial temperature extension compared to commercial variants.
Public confirmed substitute part numbers: None available.