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DSF05S30U(TPH3,F) is listed in the Single Diodes range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is DIODE SCHOTTKY 30V 500MA USC. Review the specifications below when checking this part for your BOM.
The DSF05S30U is a silicon epitaxial Schottky barrier diode designed for high-speed switching applications. It features a USC package with a maximum reverse voltage of 30 V and an average forward current rating of 500 mA. The device exhibits a low forward voltage of 0.40 V at 500 mA and a total capacitance of 120 pF at 0 V bias. Operating junction temperature ranges up to 125 °C, with storage capabilities from -55 °C to 125 °C.
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging details such as reel or cut tape quantities. Confirm RoHS compliance status directly with the manufacturer prior to procurement. Ensure design reviews account for thermal runaway risks associated with Schottky barrier reverse currents under high-temperature conditions.
Select this component for designs requiring fast recovery times and low forward voltage drops in compact surface-mount layouts. Evaluate thermal management strategies carefully due to potential reverse current increases at elevated temperatures. Verify that the 30 V reverse voltage rating provides sufficient margin for the target circuit's peak inverse voltage requirements.
This device belongs to the DSF series of Schottky barrier diodes manufactured by Toshiba Semiconductor and Storage. It utilizes a USC package suitable for automated surface-mount assembly processes. The product is intended for general electronic applications rather than specialized automotive or aerospace environments.
Consult official Toshiba substitution guides for verified equivalents. Cross-referencing requires matching the USC package, 30 V reverse voltage, and 500 mA current ratings.
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