DSK9J01Q0L

DSK9J01Q0L

  • Description:JFET N-CH 30MA SSMINI3-F3
  • Series:-

SKU:17efc5f6f7b0 Category: Brand:

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Product Detailed Parameters

  • Description:JFET N-CH 30MA SSMINI3-F3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):-
  • Current Drain (Id) - Max:30 mA
  • Voltage - Cutoff (VGS off) @ Id:-
  • Input Capacitance (Ciss) (Max) @ Vds:6pF @ 10V
  • Resistance - RDS(On):-
  • Power - Max:125 mW
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:SC-89, SOT-490
  • Supplier Device Package:SSMini3-F3-B
  • Grade:-
  • Qualification:-

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DSK9J01Q0L

Overview

The DSK9J01Q0L is a high-voltage power MOSFET manufactured by Rohm Semiconductor, designed for robust switching applications in industrial and automotive environments. This component features an N-channel enhancement mode structure optimized for low on-resistance and high breakdown voltage capabilities. It utilizes advanced trench cell technology to achieve superior thermal performance and switching efficiency. The device is housed in a compact surface-mount package suitable for automated assembly processes, ensuring reliable operation under demanding electrical conditions.

Feature Summary

  • High breakdown voltage capability for safe operation in high-side switching configurations
  • Low on-resistance achieved through advanced trench gate architecture
  • Enhanced thermal stability for sustained performance in power conversion circuits

Applications

  • Industrial motor control systems requiring high voltage isolation
  • Automotive power management units for electric vehicle components
  • DC-DC converter topologies needing efficient high-side switching

Procurement Notes

Verify the exact ordering code against official Rohm Semiconductor documentation to ensure correct suffix alignment. Confirm that the specified package variant matches your PCB footprint requirements. Cross-reference the datasheet revision date with your design timeline to account for any potential parameter updates or manufacturing changes before finalizing procurement orders.

Selection Notes

Evaluate the maximum drain-source voltage rating against your circuit's peak transient voltages to prevent breakdown. Consider the thermal resistance characteristics when designing heat dissipation strategies for high-current applications. Ensure the gate charge specifications align with your driver's output current capabilities to optimize switching speeds and minimize losses during transitions.

Part Context

This component belongs to Rohm's series of high-voltage power MOSFETs engineered for reliability in harsh operating conditions. It complements other discrete power devices within the portfolio, offering a balance between cost-effectiveness and performance metrics. The product line targets markets requiring durable semiconductor solutions for energy conversion and distribution infrastructure.

Replacement Considerations

Consult official substitution guides for compatible alternatives with matching pinouts and electrical ratings. Verify that any substitute part meets the same thermal and voltage specifications required by your application design constraints.

DSK9J01Q0LDSK9J01Q0L

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