DU28120V

Overview

The DU28120V is an N-channel RF MOSFET transistor manufactured by MACOM Technology Solutions. It utilizes silicon technology and operates within a frequency range of 2 MHz to 175 MHz. The device features a drain-source breakdown voltage (Vds) of 65 V and a gate-source threshold voltage (Vgs th) of 6 V. Key electrical parameters include a continuous drain current of 6 mA, forward transconductance of at least 3 S, and a gain of 13 dB. It delivers an output power of 120 W with a maximum power dissipation of 250 W. The component is designed for surface mount installation.

Feature Summary

• N-channel silicon RF MOSFET construction
• High output power capability
• Broadband frequency operation

Applications

• RF power amplification
• Broadband communication systems
• Military and aerospace electronics

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the surface mount package type matches the intended PCB layout requirements. Ensure that thermal management solutions are adequate for the specified power dissipation limits during operation.

Selection Notes

Select this component when designing circuits requiring high output power in the HF/VHF/UHF bands. Consider the 65 V breakdown voltage and 120 W power handling capabilities relative to system requirements. Evaluate the 13 dB gain and 3 S transconductance for amplifier stage efficiency. Verify compatibility with the required surface mount assembly process.

Part Context

This part belongs to the RF MOSFET transistor category from MACOM Technology Solutions. It is distinct from other MACOM products such as the DU2820S, which offers lower output power. The DU28120V is specifically engineered for applications demanding higher power levels within the same frequency spectrum.

Replacement Considerations

Consult official MACOM documentation for verified substitute part numbers. Cross-reference specifications carefully to ensure equivalent performance characteristics.