SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DXTP3C100PD-13 is a dual PNP low saturation transistor manufactured by Diodes Incorporated. It operates with a collector-emitter voltage of -100V and supports a continuous collector current of -3A, alongside an -8A peak pulse current rating. The device features a typical collector-emitter saturation resistance of 110mΩ and maintains functionality up to +175°C. Packaged in the PowerDI5060-8/SWP format, it includes two independent transistors within a single compact footprint designed for efficient thermal management.
Verify the specific ordering suffix '-13' against official documentation to confirm reel size and tape width specifications. Confirm that the standard marking code matches the required identification for your assembly process. Ensure compliance with moisture sensitivity level 1 handling requirements during storage and soldering operations.
Select this component when high ambient temperature environments require stable operation up to +175°C. The low saturation resistance makes it suitable for applications demanding high efficiency in power switching. Verify that the -100V breakdown voltage aligns with the circuit's maximum operating limits and consider the complementary DXTN3C100PD for matched NPN/PNP pairs.
This part belongs to Diodes Incorporated's series of dual PNP low saturation transistors. It shares the same PowerDI5060-8/SWP mechanical footprint as other devices in the family, facilitating board space optimization. The product is designed to complement the DXTN3C100PD NPN counterpart for balanced push-pull or differential circuit designs.
The datasheet explicitly identifies the DXTN3C100PD as the complementary part. No other direct substitute part numbers are documented in the provided source material.