E3M0032120J2-TR

$26.14

Description：32m, 1200V SiC FET, TO-263-7 XL
Series：E
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b65deae36b6a Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：32m, 1200V SiC FET, TO-263-7 XL
Series：E
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：74A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：43mOhm @ 38.9A, 15V
Vgs(th) (Max) @ Id：3.8V @ 10.7mA
Gate Charge (Qg) (Max) @ Vgs：108 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：3460 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：341W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Download product information

E3M0032120J2-TR

Overview

The E3M0032120J2 is a Wolfspeed automotive-qualified, N-channel enhancement mode Silicon Carbide (SiC) MOSFET from the E-Series. It utilizes third-generation SiC technology and features a TO-263-7XL package with a separate Kelvin source pin for optimized gate drive performance. The device offers a maximum drain-source voltage of 1200 V and a typical on-resistance of 32 mΩ at 25°C. Key electrical characteristics include a continuous drain current of 74 A at 25°C case temperature, a total gate charge of 108 nC, and a reverse recovery charge of 367 nC. It supports junction temperatures up to 175°C.

Feature Summary

Third-generation SiC MOSFET technology designed for high-speed switching and low capacitances.
Optimized package architecture featuring a separate driver source pin to minimize gate ringing.
Automotive qualification compliant with AEC-Q101 standards and PPAP capable.
High blocking voltage combined with low on-resistance to enhance system efficiency.

Applications

Motor Control
EV Battery Chargers
High Voltage DC/DC Converters

Procurement Notes

Verify the specific ordering suffix J2 corresponds to the TO-263-7XL package configuration. Confirm that the component meets AEC-Q101 requirements if automotive deployment is intended. Ensure thermal management solutions accommodate the specified power dissipation limits at target operating temperatures. Validate compatibility with recommended solder pad layouts provided in the datasheet.

Selection Notes

Select this component for applications requiring high-voltage handling and efficient power conversion. The separate Kelvin source pin aids in reducing switching losses and electromagnetic interference. Consider the thermal resistance and derating curves when designing heat sinks. Evaluate the trade-off between switching frequency and losses based on the external gate resistor values.

Part Context

This part belongs to Wolfspeed's E-Series discrete Silicon Carbide Power MOSFETs. The series targets onboard automotive applications including battery electric vehicles, plug-in hybrid EVs, and fuel cell EVs. The portfolio provides various packages and die sizes to support diverse power conversion topologies while maintaining reliability metrics.