E3M0040120U2

E3M0040120U2

$5.61
  • Description:MVF 200MM QUALIFIED MATERIAL
  • Series:*
  • Mfr:Wolfspeed, Inc.
  • Package:Tape & Reel (TR)

SKU:fae08c9ac265 Category: Brand:

  
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Product Detailed Parameters

  • Description:MVF 200MM QUALIFIED MATERIAL
  • Series:*
  • Mfr:Wolfspeed, Inc.
  • Package:Tape & Reel (TR)
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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E3M0040120U2

Overview

The Wolfspeed E3M0040120U2 is a discrete Silicon Carbide (SiC) MOSFET rated for 1200 V drain-source voltage. It features a maximum on-resistance of 40 mΩ and supports a continuous drain current of 62 A at case temperature. The device operates within an extended junction temperature range from -55 °C to +175 °C. It utilizes the U2 (TSC) surface-mount package configuration.

Feature Summary

  • Automotive qualified under AEC-Q101 standards
  • Third-generation SiC MOSFET technology
  • Optimized package with separate driver source pin

Applications

  • Automotive power electronics
  • High-efficiency DC-DC converters
  • On-board chargers

Procurement Notes

Verify the specific suffix against official documentation, as it determines the packaging format and reel specifications. Confirm that the component meets the required automotive qualification standards for your target application. Ensure compatibility with the intended thermal management solution given the high power density capabilities of the silicon carbide material.

Selection Notes

Select this component when high efficiency and automotive reliability are required in compact designs. The separate driver source pin facilitates low-inductance gate drive loops. Consider the thermal resistance characteristics of the U2 package for heat dissipation requirements in dense power modules.

Part Context

This part belongs to Wolfspeed's third-generation discrete SiC MOSFET portfolio. It is designed to replace traditional silicon devices in high-voltage applications. The U2 package offers a robust mechanical structure suitable for demanding environments.

Replacement Considerations

Direct replacements include the E3M0040120J2 and E3M0040120K. Verify pinout compatibility and thermal performance differences between the U2, TO-263-7 XL, and TO-247-4 packages before substitution.

E3M0040120U2E3M0040120U2
$5.61
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