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Product Detailed Parameters
- Description：60M 650V SIC AUTOMOTIVE MOSFET
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：79mOhm @ 13.2A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 3.6mA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：1170 pF @ 600 V
- FET Feature：-
- Power Dissipation (Max)：131W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The E3M0060065D is a 650 V N-channel enhancement mode Silicon Carbide MOSFET from Wolfspeed's E-Series. It utilizes third-generation SiC technology in a TO-247-3L package. Key electrical parameters include a maximum drain-source voltage of 650 V, a continuous drain current of 37 A at 25°C case temperature, and a typical on-resistance of 60 mΩ. The device supports an operating junction temperature range of -40 to +175°C.
Feature Summary
- Third-generation silicon carbide technology for high blocking voltage and low on-resistance
- High-speed switching characteristics with low capacitances
- Fast intrinsic diode featuring low reverse recovery charge
- Automotive qualified (AEC-Q101) and PPAP capable
Applications
- EV Battery Chargers
- High Voltage DC/DC Converters
Procurement Notes
Verify the specific part number against official manufacturer documentation before procurement. Confirm that the component meets all required automotive qualification standards if applicable to your design. Ensure compatibility with recommended gate drive voltages and thermal management solutions specified in the datasheet to maintain optimal performance and reliability.
Selection Notes
Select this component for applications requiring high efficiency and power density in medium-voltage environments. Consider the thermal resistance and derating curves when designing heat sinks. Evaluate the switching energy losses against system frequency requirements to ensure efficient operation within the specified temperature range.
Part Context
This device belongs to Wolfspeed's E-Series of automotive-grade silicon carbide MOSFETs. It is designed to replace traditional silicon devices in high-performance power conversion systems. The product line emphasizes improved system efficiency and reduced cooling requirements through advanced semiconductor material properties.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter overlaps before replacing existing components in established designs.
