E3M0060065K

Overview

The E3M0060065K is a third-generation silicon carbide (SiC) MOSFET from Wolfspeed, designed for high-efficiency power conversion. It features a TO-247-4L package with an optimized layout including a separate driver source pin to minimize gate ringing and switching losses. The device offers a drain-source voltage of 650 V and a maximum on-resistance of 83 mΩ at 175°C. It supports continuous drain currents up to 37 A at 25°C case temperature and operates within a junction temperature range of -40°C to +175°C. The component is automotive qualified under AEC-Q101 standards.

Feature Summary

• Third-generation SiC MOSFET technology providing low on-resistance across the operating temperature range.
• Optimized package design with a dedicated Kelvin source pin to reduce parasitic inductance and gate oscillation.
• High blocking voltage combined with fast intrinsic diode characteristics featuring ultra-low reverse recovery charge.
• Automotive qualification compliant with AEC-Q101 standards and capable of PPAP submission.

Applications

• EV Battery Chargers
• High Voltage DC/DC Converters

Procurement Notes

Verify the specific ordering suffix and revision status directly with Wolfspeed or authorized distributors before procurement. Confirm that the TO-247-4L package dimensions match your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified junction temperature limits. Check for any updated RoHS or REACH compliance declarations relevant to your region's regulations.

Selection Notes

Select this component for applications requiring high system efficiency and power density in harsh environments. The separate driver source pin makes it suitable for designs sensitive to switching noise and gate ringing. Consider the thermal resistance and current derating curves when designing heat sinks. Verify that the gate drive voltage levels align with the recommended turn-on and turn-off specifications for optimal performance.

Part Context

This part belongs to Wolfspeed's E-Series Automotive discrete SiC MOSFET lineup. It utilizes industry-standard TO-247-4L footprints, facilitating easy upgrades from existing silicon-based designs. The series targets cost-optimized designs while delivering superior performance compared to traditional silicon devices in high-voltage applications.

Replacement Considerations

Direct replacements should be sought from the same Wolfspeed C3M/E3M family with matching voltage and current ratings. Verify pin compatibility, specifically the presence of the Kelvin source pin, if replacing non-E-series parts. Cross-referencing with other manufacturers requires careful evaluation of thermal and electrical parameter differences.

FAQ

What is the purpose of the fourth pin in the TO-247-4L package?

The fourth pin is a dedicated Kelvin source (driver source) pin. It provides a low-inductance path for the gate drive return, separating it from the high-current power source path to minimize gate ringing and improve switching performance.

Is this component suitable for automotive applications?

Yes, the E3M0060065K is automotive qualified according to the AEC-Q101 standard and is capable of supporting PPAP (Production Part Approval Process) documentation.