E3M0065090D

Overview

The E3M0065090D is a Wolfspeed C3M series N-channel enhancement-mode silicon carbide (SiC) MOSFET. It features a 900 V drain-source voltage rating and a maximum continuous drain current of 36 A. The device exhibits a low on-resistance of 78 mΩ at 25°C and operates within a junction temperature range of -55°C to 150°C. Packaged in a TO-247 through-hole housing, it includes an independent Kelvin source pin to minimize gate loop inductance.

Feature Summary

• Independent Kelvin source pin reduces gate loop inductance for lower switching losses
• Wide creepage distance and gap between drain and source provide enhanced electrical isolation
• Low reverse recovery charge enables high-frequency operation with reduced system size

Applications

• Motor control systems
• Electric vehicle charging infrastructure
• Uninterruptible power supplies (UPS)
• Battery management systems
• On-board chargers

Procurement Notes

Verify the specific suffix 'E' against official datasheets to confirm package or thermal characteristics. Ensure gate drive requirements match the Gen3 specification (+15V/-3V). Confirm component authenticity via manufacturer channels before procurement.

Selection Notes

Select this component for applications requiring high blocking voltage and low conduction loss. The TO-247 package supports through-hole mounting. Evaluate thermal resistance and heat sink compatibility for target operating temperatures up to 150°C.

Part Context

This part belongs to the Wolfspeed C3M series of third-generation SiC MOSFETs. It is designed to replace silicon-based devices in hard-switching topologies, offering improved efficiency and power density. The E-series designation typically indicates automotive qualification or specific packaging variants.

Replacement Considerations

Direct replacements include C3M0065090K and C3M0065090J. Verify pinout compatibility and gate drive voltage thresholds when substituting with other Gen3 variants.