E3M0075120D

$18.13

Description：1200V AUTOMOTIVE SIC 75MOHM FET
Series：E-Series
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:76ac138b86aa Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：1200V AUTOMOTIVE SIC 75MOHM FET
Series：E-Series
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：97.5mOhm @ 17.9A, 15V
Vgs(th) (Max) @ Id：3.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：57 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1480 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：145W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Download product information

E3M0075120D

Overview

The Wolfspeed E3M0075120D is an N-channel enhancement mode Silicon Carbide (SiC) MOSFET from the E-Series, utilizing third-generation technology. It features a TO-247-3L package and is automotive qualified under AEC-Q101 with PPAP capability. Key electrical parameters include a maximum drain-source voltage of 1200 V, a typical on-resistance of 75 mΩ at 25°C, and a continuous drain current of 32 A at a case temperature of 25°C. The device supports a junction temperature range of -55°C to +175°C.

Feature Summary

Third-generation SiC MOSFET technology providing high blocking voltage and low on-resistance.
High-speed switching characteristics with low capacitances for increased system efficiency.
Fast intrinsic diode with low reverse recovery charge (Qrr).
Automotive qualification compliant with AEC-Q101 standards.

Applications

EV Battery Chargers
High Voltage DC/DC Converters

Procurement Notes

Verify component authenticity through authorized Wolfspeed distributors or direct channels. Confirm that the specific order matches the E3M0075120D designation and TO-247-3L package type. Ensure compliance with RoHS and REACh regulations as stated in the datasheet. Validate that the supplier provides valid traceability documentation required for automotive PPAP processes.

Selection Notes

Select this component for designs requiring high-voltage handling up to 1200 V and efficient thermal management within the TO-247-3L form factor. Consider the 75 mΩ on-resistance for conduction loss calculations at 25°C case temperature. Evaluate the switching energy values against the external gate resistance requirements for optimal performance in hard-switching applications.

Part Context

This discrete power MOSFET belongs to Wolfspeed's E-Series portfolio, which focuses on automotive-qualified silicon carbide devices. It complements other Wolfspeed SiC products by offering a standard industry footprint suitable for upgrading existing IGBT-based systems to improve power density and reduce cooling requirements in electric vehicle and industrial power conversion architectures.