E3M0075120J2-TR

$15.16

Description：75m, 1200V SiC FET, TO-263-7 XL
Series：E
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c5fd14db7651 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：75m, 1200V SiC FET, TO-263-7 XL
Series：E
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：97.5mOhm @ 17.9A, 15V
Vgs(th) (Max) @ Id：3.8V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：52 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1480 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：172W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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E3M0075120J2-TR

Overview

The Wolfspeed E3M0075120J2-TR is an automotive-grade, N-channel enhancement mode Silicon Carbide MOSFET from the E-Series. It utilizes 3rd generation SiC technology in a TO-263-7XL package with a separate Kelvin source pin for optimized gate drive performance. The device features a 1200V drain-source breakdown voltage and a typical on-resistance of 97.5 mΩ at 25°C. Key electrical parameters include a continuous drain current of 34A, a maximum junction temperature of 175°C, and low switching energies (Eon: 366 µJ, Eoff: 72 µJ). It is AEC-Q101 qualified and PPAP capable.

Feature Summary

Optimized package design featuring a separate driver source pin to minimize gate ringing and reduce switching losses.
High blocking voltage combined with low on-resistance to enhance system efficiency and power density.
Fast intrinsic diode characteristics with low reverse recovery charge suitable for hard-switching applications.
Automotive qualification compliant with AEC-Q101 standards and PPAP capability.

Applications

Motor Control
EV Battery Chargers
High Voltage DC/DC Converters

Procurement Notes

Verify the specific ordering suffix '-TR' corresponds to the tape and reel packaging configuration required for automated assembly processes. Confirm that the component meets all necessary automotive quality standards and regulatory compliance requirements for the intended end-use application before finalizing procurement decisions.

Selection Notes

Select this component for high-voltage applications requiring robust automotive reliability and efficient thermal management. The TO-263-7XL package supports high power dissipation, while the separate source pin facilitates precise gate control. Ensure the design accommodates the recommended gate voltage range and thermal constraints for optimal performance.

Part Context

This part belongs to Wolfspeed's E-Series, which consists of discrete silicon carbide MOSFETs designed for onboard automotive applications. The series supports various topologies including full BEVs, PHEVs, and FCEVs, offering solutions for improved power conversion system performance across efficiency, density, and reliability metrics.

Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-referencing requires matching critical specifications such as voltage rating, on-resistance, package type, and thermal characteristics to ensure functional compatibility.