E3M0075120K

$17.18

Description：1200V AUTOMOTIVE SIC 75MOHM FET
Series：E-Series
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:0d3dec446064 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：1200V AUTOMOTIVE SIC 75MOHM FET
Series：E-Series
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：97.5mOhm @ 17.9A, 15V
Vgs(th) (Max) @ Id：3.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：55 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：1480 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：145W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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E3M0075120K

Overview

The Wolfspeed E3M0075120K is a third-generation silicon carbide (SiC) MOSFET featuring an N-channel enhancement mode configuration. It provides a drain-source breakdown voltage of 1200 V and a maximum continuous drain current of 32 A at 25°C case temperature. The device exhibits a typical on-state resistance of 75 mΩ at 15 V gate drive. Operating within a junction temperature range of -55°C to +175°C, it utilizes a TO-247-4L package with a separate driver source pin.

Feature Summary

Third-generation SiC MOSFET technology optimized for high-speed switching and low capacitances.
Automotive qualified under AEC-Q101 standards with PPAP capability for onboard applications.
Integrated design includes a fast intrinsic diode with low reverse recovery charge and a separate driver source pin to minimize gate ringing.

Applications

Motor Control
EV Battery Chargers
High Voltage DC/DC Converters

Procurement Notes

Verify the specific ordering suffix 'K' against the manufacturer's official documentation to confirm the exact package variant and tape-and-reel specifications. Ensure that the selected component matches the required automotive qualification status and PPAP documentation requirements for your specific supply chain compliance needs.

Selection Notes

Select this component when designing systems requiring high blocking voltage combined with low on-resistance for improved efficiency. The separate driver source pin in the TO-247-4L package facilitates reduced switching losses and minimized gate ringing, making it suitable for high-frequency power conversion topologies where thermal management and system density are critical constraints.

Part Context

This part belongs to the Wolfspeed E-Series, which comprises discrete silicon carbide MOSFETs designed for automotive and industrial markets. The series supports various power levels from 1 kW to 60 kW using industry-standard packages. As a third-generation device, it builds upon previous technologies to offer enhanced performance metrics for electric vehicle and renewable energy applications.

Replacement Considerations

Consult official substitution guides for verified equivalents. Cross-reference electrical parameters such as RDS(on), VDS, and package dimensions before implementation.