E3M0120090J-TR

Description：SIC, MOSFET, 120M, 900V, TO-263-
Series：E
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:88ccda8c7b27 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SIC, MOSFET, 120M, 900V, TO-263-
Series：E
Mfr：Wolfspeed, Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：155mOhm @ 15A, 15V
Vgs(th) (Max) @ Id：3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：414 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：83W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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E3M0120090J-TR

Overview

The E3M0120090J-TR is a Wolfspeed automotive-grade N-channel enhancement mode Silicon Carbide MOSFET in a TO-263-7 package. It features a 900V drain-source voltage rating and a maximum continuous drain current of 22A at 25°C case temperature. The device exhibits a typical on-resistance of 120mΩ and total gate charge of 18nC. Operating junction temperatures range from -55°C to +150°C, with a thermal resistance from junction to case of 1.5°C/W.

Feature Summary

Third-generation SiC technology providing high blocking voltage combined with low on-resistance for optimized efficiency.
High-speed switching characteristics supported by low capacitances to minimize switching losses and reduce gate ringing.
Fast intrinsic body diode featuring low reverse recovery charge (Qrr) for improved performance in hard-switching applications.
Automotive qualification compliant with AEC-Q101 standards and capable of supporting PPAP requirements.

Applications

Electric vehicle charging systems
DC/DC converters
Switch-mode power supplies
Uninterruptible power supplies
Solar photovoltaic inverters

Procurement Notes

Verify the specific ordering suffix matches the required reel quantity configuration. Confirm that the component meets all applicable automotive quality standards relevant to the target assembly. Ensure proper handling procedures are followed due to moisture sensitivity classification. Validate that the TO-263-7 footprint aligns with the intended PCB layout design constraints.

Selection Notes

Evaluate the trade-off between the 120mΩ on-resistance and the 18nC gate charge based on the specific switching frequency requirements. Consider the thermal management capabilities provided by the 1.5°C/W junction-to-case resistance. Assess compatibility with standard gate drive voltages within the recommended operational limits. Verify that the 900V breakdown voltage provides adequate margin for the system's peak transient conditions.

Part Context

This component belongs to Wolfspeed's E-Series automotive portfolio, representing third-generation silicon carbide technology. It is designed specifically for high-efficiency power conversion applications requiring robust reliability. The TO-263-7 surface-mount package facilitates automated assembly while maintaining high power density capabilities suitable for compact electronic designs.

Replacement Considerations

Direct substitutes include other Wolfspeed E-Series devices such as the E3M0045090J or E3M0060090J for lower resistance options. Cross-brand replacements require careful verification of pinout compatibility and electrical parameter matching. Always consult official datasheets before implementing any alternative components in existing designs.

FAQ

What is the recommended operational gate-source voltage range?

The recommended operational gate-source voltage range is -4V to +15V. The device can also safely operate at 0V to +15V.

How does the on-resistance vary with temperature?

The on-resistance increases significantly as the junction temperature rises. At 150°C, the maximum on-resistance reaches 170mΩ compared to a typical 120mΩ at 25°C.