ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：900V 120M AUTOMOTIVE SIC MOSFET
- Series：E-Series
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：155mOhm @ 15A, 15V
- Vgs(th) (Max) @ Id：3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs：18 nC @ 15 V
- Vgs (Max)：+15V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：414 pF @ 600 V
- FET Feature：-
- Power Dissipation (Max)：83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Download product information
Overview
The E3M0120090J is a Wolfspeed E-Series automotive-qualified, N-channel enhancement mode Silicon Carbide (SiC) MOSFET housed in a TO-263-7 package. It features a maximum drain-source voltage of 900 V and a continuous drain current of 22 A at 25 °C case temperature. The device exhibits a typical on-state resistance of 120 mΩ at 25 °C and 155 mΩ at 150 °C. Key electrical parameters include a gate threshold voltage of 2.1 V, input capacitance of 414 pF, and reverse transfer capacitance of 3 pF. Switching performance under standard test conditions shows turn-on energy of 32 µJ and turn-off energy of 8 µJ.
Feature Summary
- Third-generation SiC MOSFET technology providing high blocking voltage with low on-resistance
- Automotive qualified to AEC-Q101 standards with PPAP capability for onboard vehicle applications
- Fast intrinsic body diode characterized by low reverse recovery charge and time
- Wide creepage distance between drain and source to enhance system safety margins
Applications
- EV charging systems
- DC/DC converters
- Solar PV inverters
- Uninterruptible Power Supplies (UPS)
Procurement Notes
Verify the specific ordering suffix J against official Wolfspeed documentation to confirm package type and compliance status. Ensure that design validation accounts for the recommended operational gate-source voltage limits rather than absolute maximum ratings. Confirm thermal management requirements align with the specified junction-to-case thermal resistance values provided in the datasheet.
Selection Notes
Select this component for designs requiring automotive-grade reliability and high-efficiency power conversion. The TO-263-7 package facilitates surface-mount integration while maintaining robust thermal dissipation capabilities. Consider the device's switching characteristics when designing gate drive circuits to optimize efficiency and minimize electromagnetic interference within the target application topology.
Part Context
This discrete MOSFET belongs to Wolfspeed’s E-Series portfolio, which targets demanding automotive and industrial environments. The series utilizes advanced silicon carbide material properties to outperform traditional silicon devices in terms of switching speed and thermal stability. The E3M0120090J specifically addresses the need for compact, high-power density solutions in modern electric mobility and renewable energy infrastructure.
Replacement Considerations
Consult official Wolfspeed substitution guides for verified alternatives. Cross-referencing with legacy Cree part numbers may be necessary due to historical branding transitions. Ensure any substitute maintains compatible pinout, voltage ratings, and thermal characteristics.
