E3M0160120K

$10.45

Description：SICFET N-CH 1.2KV 17.9A TO-247-4
Series：E
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:4502cae51e8f Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1.2KV 17.9A TO-247-4
Series：E
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：17.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：208mOhm @ 8.5A, 15V
Vgs(th) (Max) @ Id：3.6V @ 2.33mA
Gate Charge (Qg) (Max) @ Vgs：32 nC @ 15 V
Vgs (Max)：-8V, +19V
Input Capacitance (Ciss) (Max) @ Vds：730 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：103W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

Download product information

E3M0160120K

Overview

The Wolfspeed E3M0160120K is an N-Channel Enhancement Mode Silicon Carbide (SiC) MOSFET from the E-Series Automotive line. It features a TO-247-4L package with a separate driver source pin and 8mm creepage distance between drain and source. Key electrical parameters include a Drain-Source Voltage (VDS) of 1200 V, a continuous Drain Current (ID) of 17.9 A at TC=25°C, and a maximum On-State Resistance (RDS(on)) of 280 mΩ at TJ=175°C. The device supports a Junction Temperature range of -55°C to +175°C and has a Power Dissipation rating of 103 W.

Feature Summary

Optimized package design with a separate driver source pin to minimize gate ringing and switching losses.
High blocking voltage combined with low on-resistance for improved system efficiency.
Fast intrinsic diode with low reverse recovery charge (Qrr).
Automotive qualified (AEC-Q101) and PPAP capable.

Applications

Motor Control
EV Battery Chargers
High Voltage DC/DC Converters

Procurement Notes

Verify component authenticity by checking the manufacturer's marking against official datasheet specifications. Confirm that the TO-247-4L package dimensions match the provided outline drawing. Ensure the ordering suffix corresponds to the specific variant required for your application. Request relevant documentation such as RoHS compliance declarations and reliability test reports directly from authorized distributors or Wolfspeed representatives prior to purchase.

Selection Notes

Select this component for high-voltage applications requiring robust automotive-grade reliability. The separate driver source pin facilitates precise gate control, reducing parasitic inductance effects. Consider the thermal resistance characteristics when designing heat sinks, as the junction-to-case thermal resistance impacts power dissipation capabilities. Verify that the operating temperature range aligns with the intended environmental conditions of the final assembly.

Part Context

This part belongs to the Wolfspeed E-Series, which includes discrete SiC MOSFETs rated for 750 V, 1200 V, and 1700 V. These devices are designed to support onboard automotive applications across BEVs, PHEVs, and FCEVs. The series utilizes third-generation SiC technology to offer high durability and reliability metrics suitable for various power conversion topologies.